A research team from the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences (CAS) has unveiled a novel hybrid transfer and epitaxy strategy. This unique approach facilitates the transfer of single-crystal oxide spin Hall materials onto silicon-compatible substrates in an efficient, reproducible and high-yield fashion. It is a significant breakthrough for developing high-performance oxide-based spintronic devices.
Spintronic devices, both classical and quantum, are rapidly gaining recognition as a key technology for next-generation information systems. They’re drawing a lot of attention due to their unique benefits. An even farther-reaching promise comes from the extreme low-power consumption and non-volatility of these devices. Their ultra-fast operating capabilities make them ideal for advanced computing and data processing applications.
Specifically, the researchers studied single-crystal oxide spin Hall materials, which are known for their high charge-spin conversion efficiency. These materials are uniquely suited for the realization of low-power spintronic devices, most notably spin-orbit torque (SOT) devices. This work emphasizes the extraordinary properties of a strontium ruthenate (SRO) film. It produced the largest spin Hall conductivity to date of the order of 6.1×10^4 ħ/2e S·m^-1. Furthermore, this SRO film enabled magnetization switching at a low critical current density of 1.3×10^10 A·m^-2 within the SOT devices.
With this technology, we did something pretty amazing. This artificial neural network, powered by state-of-the-art spintronic devices, achieved a record high accuracy of 88% for image recognition tasks. This new technology highlights how spintronic technology has the potential to accelerate the most powerful machine learning and artificial intelligence applications.
The research team has created a unique approach that integrates transfer technology with epitaxial deposition. This advancement makes it possible for oxide spin Hall materials to be efficiently incorporated with silicon substrates. This successful integration is an important step toward the development of scalable, energy-efficient spintronic devices. It opens the door to new applications of silicon, one of the most widely adopted semiconductors in the electronics industry.
This research has identified some key findings. These discoveries, recently published in the journal Advanced Functional Materials, pave the way for a deeper understanding of spintronics and next-generation semiconductor technology.